| PART |
Description |
Maker |
| 3DD5017 3DD5017-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5023-O-HF-N-B 3DD5023 |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD1555 3DD1555-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 2N5832 |
NPN Transistor Plastic-case Bipolar
|
Micro Commercial Compon...
MCC[Micro Commercial Components]
|
| IRG4RC10KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3
Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
| IRGPC40KD2 1983 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated
From old datasheet system
|
IRF[International Rectifier]
|
| IRG4ZH71KD |
Surface Mountable Short Circuit Rated UltraFast IGBT (INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)
|
IRF[International Rectifier]
|
| TC74HC123AF TC74HC123AFN TC74HC123AP HC123 |
Bipolar Transistor; Package/Case:TO-126; Current Rating:500mA; Voltage Rating:300V
DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
http://
|
| BSS806N |
OptiMOS2 Small-Signal-Transistor Ultra Logic level (1.8V rated) Avalanche rated
|
TY Semiconductor Co., Ltd
|
| 2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor
Bipolar Transistor
Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
